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irfp450b.pdf Principales características:

irfp450birfp450b

November 2001 IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 14A, 500V, RDS(on) = 0.39 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 87 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D

 

Keywords - ALL TRANSISTORS. Principales características

 irfp450b.pdf Design, MOSFET, Power

 irfp450b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp450b.pdf Database, Innovation, IC, Electricity

 

 
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