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mje340.pdf Principales características:

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MJE340 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Dissipation (TC=25 C) 20 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 150 C Electrical Characteristics TC=25 C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 300 V ICBO Collector Cut-off Current VCB = 300V, IE =0 100 A IEBO Emitter Cut-off Current VBE = 3V, IC = 0 100 A hFE DC Current Gain VCE = 10V, IC =

 

Keywords - ALL TRANSISTORS. Principales características

 mje340.pdf Design, MOSFET, Power

 mje340.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje340.pdf Database, Innovation, IC, Electricity

 

 
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