mje340.pdf datasheet:

MJE340High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 VVEBO Emitter-Base Voltage 5 VIC Collector Current 500 mAPC Collector Dissipation (TC=25C) 20 WTJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 CElectrical Characteristics TC=25C unless otherwise notedSymbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 300 V ICBO Collector Cut-off Current VCB = 300V, IE =0 100 A IEBO Emitter Cut-off Current VBE = 3V, IC = 0 100 A hFE DC Current Gain VCE = 10V, IC =