mmbt2222a.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

mmbt2222a.pdf Principales características:

PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark 1P EBC NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. Absolute Maximum Ratings * Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 1.0 A TSTG Operating and Storage Junction Temperature Range - 55 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characte