2n5401.pdf Principales características:
MAIN CHARACTERISTICS FEATURES IC -600mA Epitaxial silicon VCEO -160V PC 625mW High switching speed 2N5551 Complementary to 2N5551 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform Package TO-92 E B C ABSOLUTE RATINGS (Tc=25 ) Parameter Symbol Value Unit VCBO -180 V Collector- Base Voltage IE=0 VCEO -160 V Collector- Emitter Voltage IB=0 VEBO -6.0 V Emitter-Base Voltage IC=0 IC -600 mA Colle
Keywords - ALL TRANSISTORS. Principales características
2n5401.pdf Design, MOSFET, Power
2n5401.pdf RoHS Compliant, Service, Triacs, Semiconductor
2n5401.pdf Database, Innovation, IC, Electricity
Parámetros del transistor bipolar y su interrelación.
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Recientemente añadidas las descripciónes de los transistores:
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
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