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2n3906e.pdf Principales características:

SEMICONDUCTOR 2N3906E TECHNICAL DATA General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Shipping Device Marking 2 2N3906E 2A 3000/Tape & Reel 1 SC 89 MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector Emitter Voltage V 40 Vdc CEO COLLECTOR Collector Base Voltage V CBO 40 Vdc Emitter Base Voltage V EBO 5.0 Vdc 1 Collector Current Continuous I C 200 mAdc BASE 2 THERMAL CHARACTERISTICS EMITTER Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board(1) P D 200 mW T A =25 C Derate above 25 C 1.6 mW/ C 600 C/W JA Total Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25 C Derate above 25 C 2.4 mW/ C Thermal Resistance Junction to Ambient R JA 400 C/W Junction and Storage Temperature T J , T s

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 2n3906e.pdf Design, MOSFET, Power

 2n3906e.pdf RoHS Compliant, Service, Triacs, Semiconductor

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