2n3906e.pdf datasheet:

SEMICONDUCTOR2N3906ETECHNICAL DATAGeneral Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.3ORDERING INFORMATIONShippingDevice Marking22N3906E 2A 3000/Tape & Reel 1SC 89MAXIMUM RATINGSRating Symbol Value Unit3CollectorEmitter Voltage V 40 VdcCEOCOLLECTORCollectorBase Voltage V CBO 40 VdcEmitterBase Voltage V EBO 5.0 Vdc1Collector Current Continuous IC 200 mAdcBASE2THERMAL CHARACTERISTICSEMITTERCharacteristic Symbol Max UnitTotal Device Dissipation FR 5 Board(1) P D 200 mW T A =25 CDerate above 25C 1.6 mW/C600 C/WJATotal Device Dissipation P D 300 mWAlumina Substrate, (2) T A = 25CDerate above 25C 2.4 mW/CThermal Resistance Junction to Ambient R JA 400 C/WJunction and Storage Temperature T J , T s