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GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m @VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power management, and low in-line power loss are SOP 8P package design needed in commercial industrial surface mount applications. Applications LED Display Load Switch CCFL Inverter Power Management in Notebook Computer Packages & Pin Assignments GSM4435SF(SOP- 8P) D D D D 8 7 6 5 1 2 3 4 S S S G 1 Source 5 Drain 2 Source 6 Drain 3 Source 7 Drain 4 Gate 8 Drain 1 www.gs-power.com GSM4435 Ordering Information Part Number Package Quantity R

 

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