gsm4435.pdf datasheet:

GSM4435 GSM4435 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435, P-Channel enhancement mode -30V/-10A,RDS(ON)= 28m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7.0A,RDS(ON)= 37m@VGS=-4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) power management, and low in-line power loss are SOP8P package design needed in commercial industrial surface mount applications. Applications LED Display Load Switch CCFL Inverter Power Management in Notebook Computer Packages & Pin Assignments GSM4435SF(SOP- 8P) D D D D8 7 6 51 2 3 4S S S G1 Source 5 Drain 2 Source 6 Drain 3 Source 7 Drain 4 Gate 8 Drain 1 www.gs-power.comGSM4435Ordering Information Part Number Package Quantity R