hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Principales características:

hgtp10n40c1d_hgtp10n40e1d_hgtp10n50c1d_hgtp10n50e1dhgtp10n40c1d_hgtp10n40e1d_hgtp10n50c1d_hgtp10n50e1d

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V VCE(ON) 2.5V Max. EMITTER COLLECTOR TFALL 1 s, 0.5 s GATE Low On-State Voltage COLLECTOR Fast Switching Speeds (FLANGE) High Input Impedance Anti-Parallel Diode Applications Power Supplies Terminal Diagram Motor Drives N-CHANNEL ENHANCEMENT MODE Protective Circuits C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode G insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching reg- ulators and motor drivers. They feature a discrete anti-parallel E diode that shunts current around the

 

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