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HGTP10N40C1D, HGTP10N40E1D,S E M I C O N D U C T O RHGTP10N50C1D, HGTP10N50E1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max.EMITTERCOLLECTOR TFALL: 1s, 0.5sGATE Low On-State VoltageCOLLECTOR Fast Switching Speeds(FLANGE) High Input Impedance Anti-Parallel DiodeApplications Power SuppliesTerminal Diagram Motor DrivesN-CHANNEL ENHANCEMENT MODE Protective CircuitsCDescriptionThe HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,and HGTP10N50E1D are n-channel enhancement-modeGinsulated gate bipolar transistors (IGBTs) designed for highvoltage, low on-dissipation applications such as switching reg-ulators and motor drivers. They feature a discrete anti-parallelEdiode that shunts current around the

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 hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Проектирование, MOSFET, Мощность

 hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

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