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Spec. No. HE6240 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2005.01.14 MICROELECTRONICS CORP. Page No. 1/5 H2N3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N3906 is designed for general purpose switching and amplifier applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature........................................................................................................................... -55 +150 C Junction Temperature................................................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25 C)............................................................................................................... 625 mW Maximum Voltages and Currents (TA=25 C) VCBO Collector to Base Voltag

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