2sd2142.pdf Principales características:

2sd2142

2S 2142 D TRANSISOR (NPN) SOT 23 FEATURES Darlington Connection for a High hFE High Input Impedance MARKING R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V V Emitter-Base Voltage 12 V EBO I Collector Current 300 mA C P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 /W JA Tj Junction Temperature 150 T Storage Temperature -55 +150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100 A, I =0 40 V (BR)CBO C E Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 32 V Emitter-base breakdown voltage V I =100 A, I =0 12 V (BR

 

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 2sd2142.pdf Design, MOSFET, Power

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