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15n60.pdf Principales características:

15n6015n60

isc N-Channel MOSFET Transistor 15N60 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.44 (Max) DS(on) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage-Continuous 30 V GS I Drain Current-Continuous 15 A D I Drain Current-Single Plused 60 A DM P Total Dissipation @T =25 300 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 15N60 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL

 

Keywords - ALL TRANSISTORS. Principales características

 15n60.pdf Design, MOSFET, Power

 15n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 15n60.pdf Database, Innovation, IC, Electricity

 

 
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