15n60.pdf datasheet:

isc N-Channel MOSFET Transistor 15N60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.44(Max)DS(on)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage-Continuous 30 VGSI Drain Current-Continuous 15 ADI Drain Current-Single Plused 60 ADMP Total Dissipation @T =25 300 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -55~150 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel MOSFET Transistor 15N60ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL

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