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2n3771.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3771 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 15A FE C Low Saturation Voltage- V )= 2.0V(Max)@ I = 15A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEX V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 30 A C I Collector Current-Peak 30 A CM I Base Current-Continuous 7.5 A B I Base Current-Peak 15 A BM P Collector Power Dissipation @T =25 150 W C C T Junction Temperature 200 J Stora

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 2n3771.pdf Design, MOSFET, Power

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