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2n3773.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3773 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 8A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 8A CE(sat C Complement to Type 2N6609 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 160 V CEX V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 16 A C I Collector Current-Peak 30 A CP I Base Current-Cont

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 2n3773.pdf Design, MOSFET, Power

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