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2n4398 2n4399 2n5745.pdf Principales características:

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N4398 -40 VCBO Collector-base voltage 2N4399 Open emitter -60 V 2N5745 -80 2N4398 -40 VCEO Collector-emitter voltage 2N4399 Open base -60 V 2N5745 -80 VEBO Emitter-base voltage Open collector -5 V 2N4398/4399 -30 IC Collector current A 2N5745 -20 IB Base current -7.5 A PD Total power dissipation TC=25 200 W Tj Junction temperature 200 Tstg Storage tempe

Keywords - ALL TRANSISTORS. Principales características

 2n4398 2n4399 2n5745.pdf Design, MOSFET, Power

 2n4398 2n4399 2n5745.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n4398 2n4399 2n5745.pdf Database, Innovation, IC, Electricity