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2sa1106.pdf Principales características:

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SC2581 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -140 V CBO V Collector-Emitter Voltage -140 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current-Continuous -10 A C I Base Current-Continuous -4 A B Collector Power Dissipation P 100 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power

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