2sa490.pdf Principales características:
isc Silicon PNP Power Transistor 2SA490 DESCRIPTION High Collector Current I = -3A C Collector-Emitter Breakdown Voltage V = -40V(Min) (BR)CEO Complement to Type 2SC790 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 10 Watts output applications Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -3 A C I Emitter Current-Continuous 3 A E Total Power Dissipation P 25 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA490 ELECTRICAL CHARACTERISTICS T =25 unles
Keywords - ALL TRANSISTORS. Principales características
2sa490.pdf Design, MOSFET, Power
2sa490.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sa490.pdf Database, Innovation, IC, Electricity
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet