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2sc6144.pdf Principales características:

isc Silicon NPN Power Transistors 2SC6144 DESCRIPTION Collector-Emitter Saturation Voltage- V = 0.36V(Max.)@I = 6A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 10 A C I Collector Current-Pulse 13 A CM I Base Current 2 A B Collector Power Dissipation P 25 W C T =25 C T Max.Junction Temperature 150 j T Storage Ttemperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to R 5 /W th j-c Case 1 isc Website www.iscsemi.

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 2sc6144.pdf Design, MOSFET, Power

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