2sc945.pdf datasheet:

isc Silicon NPN Transistor 2SC945 DESCRIPTION High Voltage Excellent h linearity FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Dsigned for use in driver stage of AF amplifier and low speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 100 mA C I Base Current-Continuous 20 mA B Collector Power Dissipation P 250 mW C @T =25 C T Junction Temperature 125 J T Storage Temperature Range -55 125 stg 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Transistor 2SC945 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C MA UNI SYMBOL PARAMETER CONDITIONS MIN TYP. X T V Collecto