Todos los transistores

2sd1656.pdf Principales características:

isc Silicon NPN Power Transistor 2SD1656 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current- Continuous 6 A C I Collector Current-Pulse 16 A CP Collector Power Dissipation P 60 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1656 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER

Keywords - ALL TRANSISTORS. Principales características

 2sd1656.pdf Design, MOSFET, Power

 2sd1656.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd1656.pdf Database, Innovation, IC, Electricity