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2sd2141.pdf Principales características:

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2141 DESCRIPTION High DC Current Gain- h = 1500(Min)@ I = 3A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 4A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in ignitor, driver for solenoid motor and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 330-430 V CBO V Collector-Emitter Voltage 330-430 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 6 A C I Base Current-Peak 10 A CM I Base Current-Continuous 1 A B Collector Power Dissipation P 35 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc web

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