2sd2141.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2141DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ I = 3AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignitor, driver for solenoidmotor andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 330-430 VCBOV Collector-Emitter Voltage 330-430 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 6 ACI Base Current-Peak 10 ACMI Base Current-Continuous 1 ABCollector Power DissipationP 35 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc web