2sk1940.pdf Principales características:
isc N-Channel MOSFET Transistor 2SK1940 DESCRIPTION Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 600 V DSS GS V Gate-Source Voltage 30 V GS I Drain Current-continuous@ TC=25 12 A D P Total Dissipation@TC=25 125 W tot T Max. Operating Junction Temperature 150 j T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 1.25 th j-c /W R Thermal Resistance, Junction to Ambient 35 th j-a 1 isc website www.iscsemi.cn isc & i
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2sk1940.pdf Design, MOSFET, Power
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