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2sk3565.pdf Principales características:

iscN-Channel MOSFET Transistor 2SK3565 I2SK3565 FEATURES Low drain-source on-resistance RDS(ON) =2.0 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 900 V DSS V Gate-Source Voltage 30 V GS I Drain Current-Continuous 5 A D I Drain Current-Single Pulsed 15 A DM P Total Dissipation @T =25 45 W D C T Max. Operating Junction Temperature 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 2.78 Channel-to-ambient thermal resistance /W Rth(ch-a) 62.5 1 isc website www.iscsemi.cn i

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