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2sk564.pdf Principales características:

2sk5642sk564

isc N-Channel MOSFET Transistor 2SK564 FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 32 A D P Total Dissipation @T =25 125 W D C Max. Operating Junction Temperature 150 T J Storage Temperature -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2SK564 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C TYP SYMBOL PARAMETER CON

 

Keywords - ALL TRANSISTORS. Principales características

 2sk564.pdf Design, MOSFET, Power

 2sk564.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk564.pdf Database, Innovation, IC, Electricity

 

 

 


 
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