Todos los transistores

aok18n65.pdf Principales características:

isc N-Channel MOSFET Transistor AOK18N65 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.39 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-Source Voltage-Continuous 30 V GS I Drain Current-Continuous 18 A D I Drain Current-Single Pluse 80 A DM P Total Dissipation @T =25 417 W D C T Max. Operating Junction Temperature -55 150 J Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 0.3 th j-c 1 isc websi

Keywords - ALL TRANSISTORS. Principales características

 aok18n65.pdf Design, MOSFET, Power

 aok18n65.pdf RoHS Compliant, Service, Triacs, Semiconductor

 aok18n65.pdf Database, Innovation, IC, Electricity