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irf1407.pdf Principales características:

isc N-Channel MOSFET Transistor IRF1407 IIRF1407 FEATURES Static drain-source on-resistance RDS(on) 7.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 130 A D I Drain Current-Single Pulsed 520 A DM P Total Dissipation @T =25 330 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.45 Channel-to-ambient thermal resistance /W Rth(ch-a) 62 1 isc website www.is

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 irf1407.pdf Design, MOSFET, Power

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