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irf250p225.pdf Principales características:

irf250p225irf250p225

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF250P225 IIRF250P225 FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION OR-ring and redundant power switches ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 250 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 69 A D I Drain Current-Single Pulsed 276 A DM P Total Dissipation @T =25 313 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 0.48 Channel-to-ambient thermal resistance /W Rth(j-a) 40 1 isc website www.iscsemi.cn isc & is

 

Keywords - ALL TRANSISTORS. Principales características

 irf250p225.pdf Design, MOSFET, Power

 irf250p225.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf250p225.pdf Database, Innovation, IC, Electricity

 

 
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