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irf3315.pdf Principales características:

irf3315irf3315

isc N-Channel MOSFET Transistor IRF3315 IIRF3315 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Combine with the fast switching speed and ruggedized device design ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 23 A D I Drain Current-Single Pulsed 84 A DM P Total Dissipation @T =25 94 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 1.6 Channel-to-ambient thermal resistance /W Rth(ch-a) 62 1 isc website w

 

Keywords - ALL TRANSISTORS. Principales características

 irf3315.pdf Design, MOSFET, Power

 irf3315.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3315.pdf Database, Innovation, IC, Electricity

 

 

 


 
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