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irfp360pbf.pdf Principales características:

irfp360pbfirfp360pbf

isc N-Channel MOSFET Transistor IRFP360PBF FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 400 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 23 A D I Drain Current-Single Pluse 92 A DM P Total Dissipation @T =25 250 W D C T Max. Operating Junction Temperature -55 150 J Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 0.50 th j-c /W R

 

Keywords - ALL TRANSISTORS. Principales características

 irfp360pbf.pdf Design, MOSFET, Power

 irfp360pbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp360pbf.pdf Database, Innovation, IC, Electricity

 

 
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