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irfp460.pdf Principales características:

irfp460irfp460

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 20 A D I Drain Current-Single Pluse 80 A DM P Total Dissipation @T =25 280 W D C Max. Operating Junction Temperature 150 T J T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 0.45 th j-

 

Keywords - ALL TRANSISTORS. Principales características

 irfp460.pdf Design, MOSFET, Power

 irfp460.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp460.pdf Database, Innovation, IC, Electricity

 

 

 


 
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