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irfr214.pdf Principales características:

iscN-Channel MOSFET Transistor IRFR214 FEATURES Low drain-source on-resistance RDS(ON) 2.0 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 250 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 2.2 A D I Drain Current-Single Pulsed 8.8 A DM P Total Dissipation @T =25 25 W D C T Max. Operating Junction Temperature -55 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 5.0 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark iscN-Channel MOSFET Tr

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