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mje340t.pdf Principales características:

mje340tmje340t

isc Silicon NPN Power Transistor MJE340T DESCRIPTION Collector Emitter Sustaining Voltage- V = 300 V(Min) CEO(SUS) DC Current Gain- h = 100(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 50mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 3 V EBO I Collector Current-Continuous 0.5 A C Collector Power Dissipation P 20 W C T =25 C Junction Temperature 150 T i Storage Temperature Range -65 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 6.25 /W th j-c 1 isc Websit

 

Keywords - ALL TRANSISTORS. Principales características

 mje340t.pdf Design, MOSFET, Power

 mje340t.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje340t.pdf Database, Innovation, IC, Electricity

 

 
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