Todos los transistores

 

spp15n60cfd.pdf Principales características:

spp15n60cfdspp15n60cfd

isc N-Channel MOSFET Transistor SPP15N60CFD ISPP15N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.33 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 13.4 A D I Drain Current-Single Pulsed 33 A DM P Total Dissipation @T =25 156 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.8 Channel-to-ambient thermal resistance /W Rth(ch-a) 62 1 isc website ww

 

Keywords - ALL TRANSISTORS. Principales características

 spp15n60cfd.pdf Design, MOSFET, Power

 spp15n60cfd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spp15n60cfd.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.