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stf18n65m5.pdf Principales características:

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STF18N65M5 FEATURES Higher V rating DSS Excellent switching performance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-Source Voltage 25 V GSS Drain Current-Continuous@T =25 C 15 I A D 9.4 T =100 C I Drain Current-Single Pulsed 60 A DM P Total Dissipation 25 W D T Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 5 /W Rth(ch-a) Channel-to-ambient thermal resistance 62.5 1 isc website www.iscsemi.cn isc & iscsemi is registered tradema

 

Keywords - ALL TRANSISTORS. Principales características

 stf18n65m5.pdf Design, MOSFET, Power

 stf18n65m5.pdf RoHS Compliant, Service, Triacs, Semiconductor

 stf18n65m5.pdf Database, Innovation, IC, Electricity

 

 
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