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tip36cf.pdf Principales características:

isc Silicon PNP Power Transistor TIP36CF DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type TIP35CF Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = -1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -25 A C I Collector Current-peak -40 A CM I Base Current -5 A B Collector Power Dissipation P 125 W C @T =25 C T Junction Temperature 150 j Storage Temperature Range -65 150 T stg THERMAL CHARACTERI

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