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isc Silicon PNP Power Transistor TIP36CFDESCRIPTIONDC Current Gain-: h = 25(Min)@I = -1.5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type TIP35CFCurrent Gain-Bandwidth Product-: f = 3.0MHz(Min)@I = -1.0AT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -100 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -25 ACI Collector Current-peak -40 ACMI Base Current -5 ABCollector Power DissipationP 125 WC@T =25CT Junction Temperature 150 jStorage Temperature Range -65~150 TstgTHERMAL CHARACTERI