auirf540z auirf540zs.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

auirf540z auirf540zs.pdf Principales características:

AUIRF540Z AUTOMOTIVE GRADE AUIRF540ZS Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 175 C Operating Temperature 21m Fast Switching max. 26.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 36A Automotive Qualified * Description D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing S D S techniques to achieve extremely low on-resistance per silicon G G area. Additional features of this design are a 175 C junction TO-220AB operating temperature, fast switching speed and improved D2Pak AUIRF540Z AUIRF540ZS repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automot