bsd214sn.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

bsd214sn.pdf Principales características:

BSD214SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 140 m DS(on),max GS Enhancement mode V =2.5 V 250 GS Super Logic level (2.5V rated) I 1.5 A D Avalanche rated Qualified according to AEC Q101 PG-SOT363 100% lead-free; RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSD214SN PG-SOT- H6327 3000 pcs/ reel X5s Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 1.5 A D A T =70 C 1.2 A I T =25 C Pulsed drain current 6 D,pulse A E Avalanche energy, single pulse I =1.5 A, R =25 3.7 mJ AS D GS I =1.5 A, V =16 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/ s, 6 kV/ s T =150