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iki04n60t.pdf Principales características:

iki04n60tiki04n60t

IKP04N60T TrenchStop Series pIJIKI04N60Tdsadsa Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Very low VCE(sat) 1.5 V (typ.) C Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for G E - Frequency Converters - Drives TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed PG-TO-220-3-1 PG-TO-262-3 - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete produc

 

Keywords - ALL TRANSISTORS. Principales características

 iki04n60t.pdf Design, MOSFET, Power

 iki04n60t.pdf RoHS Compliant, Service, Triacs, Semiconductor

 iki04n60t.pdf Database, Innovation, IC, Electricity

 

 

 


 
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