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IRF150P220 MOSFET PG-TO 247-3 StrongIRFET Features Very low R DS(on) Excellent gate charge x R (FOM) DS(on) Optimized Q rr 175 C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 1 2 3 Benefits Reduced conduction losses Ideal for high switching frequency Drain Lower overshoot voltage Pin 2 Increased reliability versus 150 C rated parts Halogen-free according to IEC61249-2-21 Gate Pin 1 Source Table 1 Key Performance Parameters Pin 3 Parameter Value Unit V 150 V DS R 2.3 m DS(on),typ R 2.7 m DS(on),max I 316 A D(Silicon Limited) I 203 A D(Package Limited) Q (0V..10V) 160 nC G Type / Ordering Code Package Marking Related Links IRF150P220 PG-TO247-3 IRF150P220 - Final Data Sheet 1 Rev. 2.1, 2020-02-03 StrongIR

 

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 irf150p220.pdf Design, MOSFET, Power

 irf150p220.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf150p220.pdf Database, Innovation, IC, Electricity

 

 
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