Todos los transistores

irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf Principales características:

IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB C C Applications Industrial Motor Drive E Inverters E C C G G G UPS Welding IRGS4630DPbF E IRGIB4630DPbF D2Pak TO-220AB Full-Pak n-channel G C E Gate Collector Emitter Features Benefits High efficiency in a wide range of applications and switching Low VCE(ON) and switching losses frequencies Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175 C performance and high power capability Positive VCE (ON) temperature coef

Keywords - ALL TRANSISTORS. Principales características

 irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf Design, MOSFET, Power

 irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf Database, Innovation, IC, Electricity