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sgb15n60hs.pdf Principales características:

sgb15n60hssgb15n60hs

SGB15N60HS ^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers - parallel switching capability PG-TO-263-3-2 (D -PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distribution High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models http //www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking Package G15N60HS SGB15N60HS 600V 15A 200 J 150 C PG-TO-263-3-2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current IC A 27 TC = 25 C 15 TC = 100 C Pulsed

 

Keywords - ALL TRANSISTORS. Principales características

 sgb15n60hs.pdf Design, MOSFET, Power

 sgb15n60hs.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sgb15n60hs.pdf Database, Innovation, IC, Electricity

 

 
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