sgb15n60hs.pdf datasheet:

SGB15N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D-PAK)- moderate Eoff increase with temperature (TO-263AB) - very tight parameter distribution High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking PackageG15N60HS SGB15N60HS 600V 15A 200J 150C PG-TO-263-3-2 Maximum Ratings Parameter Symbol Value UnitCollector-emitter voltage VCE 600 VDC collector current IC A 27 TC = 25C 15 TC = 100C Pulsed