sgp04n60 sgd04n60g.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

sgp04n60 sgd04n60g.pdf Principales características:

SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for - Motor controls G E - Inverter NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252-3-1 (D-PAK) PG-TO-220-3-1 - parallel switching capability (TO-252AA) (TO-220AB) Pb-free lead plating; RoHS compliant Qualified according to JEDEC2 for target applications Complete product spectrum and PSpice Models http //www.infineon.com/igbt/ Type VCE IC VCE(sat)150 C Tj Marking Package SGP04N60 600V 4A 2.3V G04N60 PG-TO-220-3-1 150 C SGD04N60 600V 4A 2.3V G04N60 PG-TO-252-3-11 150 C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VC