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sgp04n60 sgd04n60g.pdf datasheet:

sgp04n60_sgd04n60gsgp04n60_sgd04n60g

SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-252-3-1 (D-PAK) PG-TO-220-3-1 - parallel switching capability (TO-252AA) (TO-220AB) Pb-free lead plating; RoHS compliant Qualified according to JEDEC2 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat)150C Tj Marking PackageSGP04N60 600V 4A 2.3V G04N60 PG-TO-220-3-1150CSGD04N60 600V 4A 2.3V G04N60 PG-TO-252-3-11150CMaximum Ratings Parameter Symbol Value UnitCollector-emitter voltage VC

 

Keywords - ALL TRANSISTORS DATASHEET

 sgp04n60 sgd04n60g.pdf Design, MOSFET, Power

 sgp04n60 sgd04n60g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sgp04n60 sgd04n60g.pdf Database, Innovation, IC, Electricity

 

 
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