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smbta56 mmbta56.pdf Principales características:

SMBTA56/MMBTA56 PNP Silicon AF Transistor Low collector-emitter saturation voltage 2 3 Complementary type SMBTA06 / MMBTA06(NPN) 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA56/MMBTA56 s2G SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 80 V Collector-emitter voltage VCEO 80 Collector-base voltage VCBO 4 Emitter-base voltage VEBO 500 mA Collector current IC 1 A Peak collector current, tp 10 ms ICM 100 mA Base current IB 200 Peak base current IBM 330 mW Total power dissipation- Ptot TS 79 C 150 C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit K/W Junction - soldering point1) RthJS 215 1 For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation

Keywords - ALL TRANSISTORS. Principales características

 smbta56 mmbta56.pdf Design, MOSFET, Power

 smbta56 mmbta56.pdf RoHS Compliant, Service, Triacs, Semiconductor

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